INVESTIGATION OF ERBIUM DOPING OF INP AND (GA,IN)(AS,P) LAYERS GROWN BY LPE

被引：15

作者：

CHATTERJEE, AK

HAIGH, J

机构：

[1] British Telecom Research Laboratories, Martlesham Heath

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 106卷 / 04期

关键词：

D O I：

10.1016/0022-0248(90)90027-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of erbium-doped InP and (Ga,In)(As,P) lattice-matched to InP has been carried out using LPE, incorporating several refinements designed to reduce the deleterious formation of the oxide and hydride of erbium which have been a feature of previous reports. The work did not reproducibly result in material capable of Er-related luminescence near 1.54-mu-m. It is concluded that erbium-rich particulate inclusions in the layers are the major source of the 1.54-mu-m emission previously reported from such LPE layers.

引用

收藏

页码：537 / 542

页数：6

相关论文

共 26 条

[1] ELECTRON-SPIN RESONANCE OF ERBIUM IN GALLIUM-ARSENIDE [J].

BAEUMLER, M ;

SCHNEIDER, J ;

KOHL, F ;

TOMZIG, E .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (35) :L963-L965

[2] INCORPORATION OF ERBIUM IN GAAS BY LIQUID-PHASE EPITAXY [J].

BANTIEN, F ;

BAUSER, E ;

WEBER, J .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2803-2806

[3] INTENSE AND SHARPLY STRUCTURED 1.54-MU-M ROOM-TEMPERATURE LUMINESCENCE OF ER-DOPED GAAS/ALGAAS STRUCTURES GROWN BY MBE [J].

CHARASSE, MN ;

GALTIER, P ;

HUBER, AM ;

GRATTEPAIN, C ;

CHAZELAS, J ;

HIRTZ, JP .

ELECTRONICS LETTERS, 1988, 24 (23) :1458-1460

[4] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[5] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS [J].

ENNEN, H ;

KAUFMANN, U ;

POMRENKE, G ;

SCHNEIDER, J ;

WINDSCHEIF, J ;

AXMANN, A .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :165-168

[6] PHOTOLUMINESCENCE EXCITATION MEASUREMENTS ON GAAS-ER GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

WAGNER, J ;

MULLER, HD ;

SMITH, RS .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4877-4879

[7]

ENNEN H, 1987, 16TH P C SOL STAT DE, P88

[8]

FAVENNEC PN, 1987, ELECTRON LETT, V232, P684

[9]

GSCHNEIDNER KA, 1979, HDB PHYSICS CHEM RAR, V4

[10]

HAIGH J, 1980, P 1980 NATO INP WORK, P123