INTENSE AND SHARPLY STRUCTURED 1.54-MU-M ROOM-TEMPERATURE LUMINESCENCE OF ER-DOPED GAAS/ALGAAS STRUCTURES GROWN BY MBE

被引：8

作者：

CHARASSE, MN

GALTIER, P

HUBER, AM

GRATTEPAIN, C

CHAZELAS, J

HIRTZ, JP

机构：

[1] Thomson CSF-LCR, France

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 23期

关键词：

D O I：

10.1049/el:19880996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

11

引用

收藏

页码：1458 / 1460

页数：3

相关论文

共 11 条

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