ELECTRONIC AND OPTICAL-PROPERTIES OF FE-DOPED INP PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：19

作者：

HUANG, K ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.337432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4342 / 4344

页数：3

共 7 条

[1] VAPOR PRESSURE AND THIRD-LAW ENTROPY OF FERROCENE [J].

ANDREWS, JTS ;

WESTRUM, EF .

JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1969, 17 (02) :349-&

[2] CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR [J].

BENEKING, H ;

ESCOBOSA, A ;

KRAUTLE, H .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :473-480

[3] AN INVESTIGATION OF THE DEEP LEVEL PHOTO-LUMINESCENCE SPECTRA OF INP(MN), INP(FE), AND OF UNDOPED INP [J].

EAVES, L ;

SMITH, AW ;

SKOLNICK, MS ;

COCKAYNE, B .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4955-4963

[4]

GEORGOBIANI AN, 1983, SOV PHYS SEMICOND+, V17, P370

[5] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J].

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) :10-14

[6] ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MACRANDER, AT ;

LONG, JA ;

RIGGS, VG ;

BLOEMEKE, AF ;

JOHNSTON, WD .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1297-1298

[7] A MODEL FOR THE - 1.10EV EMISSION BAND IN INP [J].

YU, PW .

SOLID STATE COMMUNICATIONS, 1980, 34 (03) :183-186

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