iron oxide;
gas sensor;
sputtering;
O-3;
NO2;
NO2;
DETECTION;
D O I:
10.1016/j.proeng.2011.12.054
中图分类号:
TH7 [仪器、仪表];
学科分类号:
080401 [精密仪器及机械];
摘要:
Hematite (alpha-Fe2O3) and barium oxide doped hematite (BaO-Fe2O3) thin films were investigated as ozone (O-3) and nitrogen dioxide (NO2) sensing materials. Fe2O3 and BaO-Fe2O3 films were deposited by radio-frequency sputtering using pure Fe2O3, and 1-2% BaO doped Fe2O3 targets. The 700 degrees C (1 hour) annealed films showed significant responses to O-3 at temperatures ranging from 150 degrees C to 300 degrees C. Although, hematite is an n-type semiconductor, the Fe2O3 and BaO-Fe2O3 films exhibit p-type behavior to O-3 and n-type behavior to NO2 at the studied concentration ranges in this work. The response to oxidizing gases is not strictly an increase in resistance due to a conversion from n-type to p-type depending on gas concentrations. This effect is more visible with increasing Ba concentration. (C) 2011 Published by Elsevier Ltd.