Spin relaxation in semiconductor mesoscopic systems

被引：20

作者：

Khaetskii, AV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow District, Russia

[2] NTT, Basic Res Labs 3 1, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICA E | 2001年 / 10卷 / 1-3期

关键词：

spin relaxation; quantum dots; phonons;

D O I：

10.1016/S1386-9477(01)00047-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Phonon-assisted spin-flip transitions between the Zeeman sublevels are considered for two different mesoscopic systems: GaAs quantum dots (localized states) and the 2D electron system in the quantum Hall-regime for filling factor 1 (delocalized states). The phonon-assisted spin-flip rates for all spin-orbit-related mechanisms are evaluated. The role of the localization of the electron states in the effectiveness of the spin-lattice relaxation and the different role of the Coulomb interaction for these two systems are discussed. Tt is shown, for example, that spin-lattice relaxation for the electron localized in a quantum dot is much less effective than for the free electron. Besides, the spin-flip rates due to several other mechanisms not related to the spin-orbit interaction are estimated for the dot electron. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：27 / 31

页数：5

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