Length quantization in In0.13Ga0.87As/GaAs quantum boxes with rectangular cross section

被引：7

作者：

Michel, M

Forchel, A

Faller, F

机构：

[1] Technische Physik, Universität Würzburg, D-97074 Würzburg, Am Hubland

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 03期

关键词：

D O I：

10.1063/1.118384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By electron-beam lithography and wet chemical etching quantum boxes with a controlled shape as, e.g., a rectangular cross section, can be realized. We have fabricated quantum boxes with approximately constant widths of 50-60 nm and strongly varying lengths (150-80 nm). The luminescence of the structures shows a shift of the ground-state emission to higher energy as well as transitions between excited box states. By comparison with model calculations the changes of the emission spectra are related to the length quantization in the structures. (C) 1997 American Institute of Physics.

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页码：393 / 395

页数：3

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