Modification of anode surface in organic light-emitting diodes by chalcogenes

被引：17

作者：

Katkova, Marina A. ^{[1
]}

Ilichev, Vasilii A. ^{[1
]}

Konev, Alexey N. ^{[1
]}

Batenkin, Maxim A. ^{[1
]}

Pestova, Irina I. ^{[1
]}

Vitukhnovsky, Alexey G. ^{[2
,3
]}

Bochkarev, Mikhail N. ^{[1
]}

机构：

[1] Russian Acad Sci, GA Razuvaev Inst Organomet Chem, Nizhnii Novgorod 603950, Russia

[2] RAS, PN Lebedev Phys Inst, Moscow 119991, Russia

[3] PN Lebedev Res Ctr Phys, Moscow 119991, Russia

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 08期

关键词：

OLEDs; sulphur; selenium; tellurium; ITO/TPD interface;

D O I：

10.1016/j.apsusc.2007.06.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Influence of thin chalcogen X (S, Se, Te) interlayer between anode (indium-tin oxide, ITO) and a layer of N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) used as a hole-transport layer (HTL) on the operating characteristics of organic light-emitting diodes (OLEDs) of composition ITO/X/TPD/Alq(3)/Yb (Alq(3)-aluminum 8-quinolinolate) has been investigated. It was found that the sulphur layer decreases operating voltage and enhances operating stability of a device while the selenium or tellurium interlayers impair these characteristics. (c) 2008 Published by Elsevier B.V.

引用

页码：2216 / 2219

页数：4

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