Radiative processes in bulk crystalline silicon

被引：9

作者：

Davies, G ^{[1
]}

机构：

[1] Univ London Kings Coll, Dept Phys, London WC2R 2LS, England

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

关键词：

photoluminescence; silicon; semiconductor;

D O I：

10.1016/S0022-2313(98)00064-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

For the luminescence from optical centres in bulk silicon to be of use in opto-electronic devices the silicon should emit at room temperature at a well-defined wavelength, with a minimum of heat generation, and with a high quantum efficiency. These criteria are not satisfied. The reasons are reviewed in terms of the intrinsic properties of typical centres and of effects which are extrinsic to the centres. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 7

页数：7

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