Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films \

被引：49

作者：

Chen, Liang ^{[1
]}

Xia, Yidong

Liang, Xuefei

Yin, Kuibo

Yin, Jiang

Liu, Zhiguo

Chen, Yong

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Univ Calif Los Angeles, Calif Nanosyst Inst, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 07期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2771064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An organic bistable device with a structure Cu/Cu2S/copperphthalocyanine (Cu-Pc)/Pt was fabricated. Compared to the single layer organic device composed of Cu/Cu-Pc/Pt, the bilayer devices were observed to show distinct bistability with the resistance ratio of the off/on states up to 10(7) and low switch voltage (0.75-0.85 V). At least 10(5) switching cycles were achieved in the "write-read-erase-read" cycle voltage. The filament mechanism for the device is supported by the "metallic" behavior in their temperature dependence of the resistance in the on state. Such a memory device provides a promising structure for the nonvolatile memory. (C) 2007 American Institute of Physics.

引用

页数：3

共 17 条

[1] Nanoscale molecular-switch devices fabricated by imprint lithography [J].

Chen, Y ;

Ohlberg, DAA ;

Li, XM ;

Stewart, DR ;

Williams, RS ;

Jeppesen, JO ;

Nielsen, KA ;

Stoddart, JF ;

Olynick, DL ;

Anderson, E .

APPLIED PHYSICS LETTERS, 2003, 82 (10) :1610-1612

[2] Towards addressable organic impedance switch devices [J].

Jakobsson, FLE ;

Crispin, X ;

Berggren, M .

APPLIED PHYSICS LETTERS, 2005, 87 (06)

[3] Non-volatile memory based on solid electrolytes [J].

Kozicki, MN ;

Gopalan, C ;

Balakrishnan, M ;

Park, M ;

Mitkova, M .

2004 NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS, 2004, :10-17

[4] Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications [J].

Lai, YS ;

Tu, CH ;

Kwong, DL ;

Chen, JS .

APPLIED PHYSICS LETTERS, 2005, 87 (12) :1-3

[5] Relationship between interfacial adhesion and electromigration in Cu metallization [J].

Lane, MW ;

Liniger, EG ;

Lloyd, JR .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1417-1421

[6] Electric switching and memory devices made from RbAg4I5 films [J].

Liang, X. F. ;

Chen, Y. ;

Chen, L. ;

Yin, J. ;

Liu, Z. G. .

APPLIED PHYSICS LETTERS, 2007, 90 (02)

[7] Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer [J].

Ma, LP ;

Xu, QF ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2004, 84 (24) :4908-4910

[8] Nonvolatile electrical bistability of organic/metal-nanocluster/organic system [J].

Ma, LP ;

Pyo, S ;

Ouyang, J ;

Xu, QF ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2003, 82 (09) :1419-1421

[9] Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition [J].

Oyamada, T ;

Tanaka, H ;

Matsushige, K ;

Sasabe, H ;

Adachi, C .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1252-1254

[10] Nonvolatile memory with multilevel switching: A basic model [J].

Rozenberg, MJ ;

Inoue, IH ;

Sánchez, MJ .

PHYSICAL REVIEW LETTERS, 2004, 92 (17) :178302-1

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