Supported lipid membrane on semiconductor electrode

被引:15
作者
Abdelghani, A
Jacquin, C
Huber, M
Deutschmann, R
Sackmann, E
机构
[1] Inst Natl Sci Appl & Technol Tunis, Ctr Urbain Nord, Dept Genie Phys & Instrumentat, Charguia 1080, Tunisia
[2] Tech Univ Munich, Inst Biophys, Dept Phys, D-85748 Garching, Germany
[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
silicon; XPS; impedance spectroscopy; lipid membrane; biosensor;
D O I
10.1016/S0254-0584(00)00506-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present work is motivated by attempts in our laboratory to develop the physical basis for the design of biosensors (suited for aqueous medium) based on biofunctional supported membranes as receptor surfaces. We study the electric properties of supported lipid membrane on modified silicon electrode with impedance spectroscopy. To functionalize the silicon wafers. a thin layer of silicon dioxide (SiO2) was grown by wet oxidation. The thin layer has been characterized by X-ray photoelectron spectroscopy (XPS), electrical impedance spectroscopy and cyclic volatammetry. We prepared electrolyte-membrane-electrolyte-semicon (EMES) interface by fusion of positively charged lipid vesicles (containing 50 mol% DOTAP and 50 mol% cholesterol) on Si/SiO2 electrodes. Membrane resistances up 30 k Omega cm(2) were reached. By impedance spectroscopy it is possible to discriminate between changes of the capacitance of the silicon electrode and the membrane capacitance. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:187 / 190
页数:4
相关论文
共 13 条
[1]   The effects of the time-dependent and exposure time to air on Au epilayer n-Si Schottky diodes [J].
Çetinkara, HA ;
Saglam, M ;
Türüt, A ;
Yalçin, N .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1999, 6 (01) :89-94
[2]   Drift behavior of ISFETs with a-Si:H-SiO2 gate insulator [J].
Chou, JC ;
Hsiao, CN .
MATERIALS CHEMISTRY AND PHYSICS, 2000, 63 (03) :270-273
[3]  
ERAY M, 1993, IEEE T ELECT DEV, V40
[4]   Impedance spectroscopy of porin and gramicidin pores reconstituted into supported lipid bilayers on indium-tin-oxide electrodes [J].
Gritsch, S ;
Nollert, P ;
Jahnig, F ;
Sackmann, E .
LANGMUIR, 1998, 14 (11) :3118-3125
[5]   Structural characterization and electron tunneling at n-Si/SiO2/SAM/liquid interface [J].
Gu, Y ;
Akhremitchev, B ;
Walker, GC ;
Waldeck, DH .
JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (25) :5220-5226
[6]   High electric resistance polymer/lipid composite films on indium-tin-oxide electrodes [J].
Hillebrandt, H ;
Wiegand, G ;
Tanaka, M ;
Sackmann, E .
LANGMUIR, 1999, 15 (24) :8451-8459
[7]   FORMATION OF SUPPORTED PLANAR BILAYERS BY FUSION OF VESICLES TO SUPPORTED PHOSPHOLIPID MONOLAYERS [J].
KALB, E ;
FREY, S ;
TAMM, LK .
BIOCHIMICA ET BIOPHYSICA ACTA, 1992, 1103 (02) :307-316
[8]  
LINGLER S, 1997, LANGMUIR, V13, P8451
[9]   Impact of the gate material on the interface state density of metal-oxide-silicon devices with an ultrathin oxide layer [J].
Lundgren, P .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) :2229-2232
[10]  
Macdonald J. R., 1987, IMPEDANCE SPECTROSCO