Impact of the gate material on the interface state density of metal-oxide-silicon devices with an ultrathin oxide layer

被引：10

作者：

Lundgren, P ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 04期

关键词：

D O I：

10.1063/1.369531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum, chromium, gold and polycrystalline silicon contacted metal-oxide-silicon devices with ultrathin (similar to 3 nm) thermal oxides have been compared regarding their electrical characteristics. The impact of the gate material on the features of the interface state density displays itself mainly as a change in the passivation dynamics during heat treatment of what appears to be one and the same as-grown dangling bond defect in all cases. (C) 1999 American Institute of Physics. [S0021-8979(99)01104-4].

引用

页码：2229 / 2232

页数：4

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