CHEMISTRY OF SI-SIO2 INTERFACE TRAP ANNEALING

[1] GENERATION OF INTERFACE STATES IN MOS SYSTEMS [J]. THIN SOLID FILMS, 1982, 89 (04) : 329 - 338

[2] BALK P, 1965, FAL P EL SOC M BUFF, P29

[3] STABLE AND UNSTABLE SURFACE-STATE CHARGE IN THERMALLY OXIDIZED SILICON [J]. SOLID-STATE ELECTRONICS, 1976, 19 (11) : 897 - 907

[4] NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 116 - 118

[5] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113

[6] DEFECTS AND IMPURITIES IN THERMAL OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 251 - 253

[7] THERMAL ANNEALING OF RADIATION-INDUCED DEFECTS - A DIFFUSION-LIMITED PROCESS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4059 - 4063

[8] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +

[9] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 280 - +

[10] AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 662 - 664

[1] GENERATION OF INTERFACE STATES IN MOS SYSTEMS [J]. THIN SOLID FILMS, 1982, 89 (04) : 329 - 338

[2] BALK P, 1965, FAL P EL SOC M BUFF, P29

[3] STABLE AND UNSTABLE SURFACE-STATE CHARGE IN THERMALLY OXIDIZED SILICON [J]. SOLID-STATE ELECTRONICS, 1976, 19 (11) : 897 - 907

[4] NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 116 - 118

[5] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113

[6] DEFECTS AND IMPURITIES IN THERMAL OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 251 - 253

[7] THERMAL ANNEALING OF RADIATION-INDUCED DEFECTS - A DIFFUSION-LIMITED PROCESS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4059 - 4063

[8] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +

[9] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 280 - +

[10] AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 662 - 664