AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE

被引：59

作者：

CHANG, ST ^{[1
]}

WU, JK ^{[1
]}

LYON, SA ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：662 / 664

页数：3

相关论文

共 22 条

[1] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE
BROWER, KL
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113
[2] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS
CAPLAN, PJ
POINDEXTER, EH
DEAL, BE
RAZOUK, RR
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854
[3] LOCATION OF POSITIVE CHARGE TRAPPED NEAR THE SI-SIO2 INTERFACE AT LOW-TEMPERATURE
CHANG, ST
LYON, SA
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 136 - 138
[4] CLEMENT JJ, 1977, THESIS PRINCETON U
[5] RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS
HU, G
JOHNSON, WC
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 590 - 591
[6] HU G, 1979, THESIS PRINCETON U
[7] RELATIONSHIP BETWEEN X-RAY-PRODUCED HOLES AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
HU, GJ
JOHNSON, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1441 - 1444
[8] JENQ CS, 1977, THESIS PRINCETON U
[9] CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
CHANG, ST
POINDEXTER, EH
CAPLAN, PJ
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 563 - 565
[10] JOHNSON NM, 1980, PHYSICS MOS INSULATO, P311