LOCATION OF POSITIVE CHARGE TRAPPED NEAR THE SI-SIO2 INTERFACE AT LOW-TEMPERATURE

被引：47

作者：

CHANG, ST ^{[1
]}

LYON, SA ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：136 / 138

页数：3

共 22 条

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[9] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J].

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JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2540-2546

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