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RELATIONSHIP BETWEEN X-RAY-PRODUCED HOLES AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
被引:52
作者
:
HU, GJ
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
HU, GJ
[
1
]
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
JOHNSON, WC
[
1
]
机构
:
[1]
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
来源
:
JOURNAL OF APPLIED PHYSICS
|
1983年
/ 54卷
/ 03期
关键词
:
D O I
:
10.1063/1.332169
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1441 / 1444
页数:4
相关论文
共 30 条
[1]
BOESCH HE, 1982, 19TH ANN C NUCL SPAC
[2]
CHANG CC, 1976, THESIS PRINCETON U
[3]
CLEMENT JJ, 1977, THESIS PRINCETON U
[4]
EFFECTS OF X-RAY IRRADIATION ON CHARACTERISTICS OF METAL-OXIDE-SILICON STRUCTURES - (VOLTAGE SHIFT SURFACE STATES 10 TO 100 KEV E/T)
COLLINS, DR
论文数:
0
引用数:
0
h-index:
0
COLLINS, DR
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(05)
: 124
-
&
[5]
SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
HEINE, V
论文数:
0
引用数:
0
h-index:
0
HEINE, V
NICOLLIAN, EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIAN, EH
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(03)
: 95
-
+
[6]
MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES
GWYN, CW
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
GWYN, CW
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4886
-
+
[7]
RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS
HU, G
论文数:
0
引用数:
0
h-index:
0
HU, G
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WC
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 590
-
591
[8]
RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE
HUGHES, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Naval Research Laboratory, Washington
HUGHES, HL
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1969,
NS16
(06)
: 195
-
&
[9]
Hughes HL., 1964, ELECTRONICS, V37, P58
[10]
JENQ CS, 1977, THESIS PRINCETON U
←
1
2
3
→
共 30 条
[1]
BOESCH HE, 1982, 19TH ANN C NUCL SPAC
[2]
CHANG CC, 1976, THESIS PRINCETON U
[3]
CLEMENT JJ, 1977, THESIS PRINCETON U
[4]
EFFECTS OF X-RAY IRRADIATION ON CHARACTERISTICS OF METAL-OXIDE-SILICON STRUCTURES - (VOLTAGE SHIFT SURFACE STATES 10 TO 100 KEV E/T)
COLLINS, DR
论文数:
0
引用数:
0
h-index:
0
COLLINS, DR
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(05)
: 124
-
&
[5]
SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
HEINE, V
论文数:
0
引用数:
0
h-index:
0
HEINE, V
NICOLLIAN, EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIAN, EH
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(03)
: 95
-
+
[6]
MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES
GWYN, CW
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
GWYN, CW
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4886
-
+
[7]
RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS
HU, G
论文数:
0
引用数:
0
h-index:
0
HU, G
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WC
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 590
-
591
[8]
RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE
HUGHES, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Naval Research Laboratory, Washington
HUGHES, HL
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1969,
NS16
(06)
: 195
-
&
[9]
Hughes HL., 1964, ELECTRONICS, V37, P58
[10]
JENQ CS, 1977, THESIS PRINCETON U
←
1
2
3
→