RELATIONSHIP BETWEEN X-RAY-PRODUCED HOLES AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引：52

作者：

HU, GJ ^{[1
]}

JOHNSON, WC ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.332169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1441 / 1444

页数：4

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