THERMAL ANNEALING OF RADIATION-INDUCED DEFECTS - A DIFFUSION-LIMITED PROCESS

被引：28

作者：

BROWN, DB

MA, DI

DOZIER, CM

PECKERAR, MC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：4059 / 4063

页数：5

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