CHEMISTRY OF SI-SIO2 INTERFACE TRAP ANNEALING

[31] CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 563 - 565

[32] DEUTERIUM AT THE SI-SIO2 INTERFACE DETECTED BY SECONDARY-ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 995 - 997

[33] ELECTRIC-FIELD DEPENDENCE OF HYDROGEN NEUTRALIZATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 874 - 876

[34] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +

[35] INTERFACE CHARGE CHARACTERISTICS OF MOS STRUCTURES WITH DIFFERENT METALS ON STEAM GROWN OXIDES [J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 723 - 732

[36] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[37] LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171

[38] INFLUENCE OF THERMAL SIO2 SURFACE CONSTITUTION ON ADHERENCE OF PHOTORESISTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) : 660 - &

[39] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657

[40] NICOLLIAN EH, 1986, SEMICONDUCTOR SILICO, P437

[31] CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 563 - 565

[32] DEUTERIUM AT THE SI-SIO2 INTERFACE DETECTED BY SECONDARY-ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 995 - 997

[33] ELECTRIC-FIELD DEPENDENCE OF HYDROGEN NEUTRALIZATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 874 - 876

[34] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +

[35] INTERFACE CHARGE CHARACTERISTICS OF MOS STRUCTURES WITH DIFFERENT METALS ON STEAM GROWN OXIDES [J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 723 - 732

[36] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[37] LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171

[38] INFLUENCE OF THERMAL SIO2 SURFACE CONSTITUTION ON ADHERENCE OF PHOTORESISTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) : 660 - &

[39] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657

[40] NICOLLIAN EH, 1986, SEMICONDUCTOR SILICO, P437