INTERFACE CHARGE CHARACTERISTICS OF MOS STRUCTURES WITH DIFFERENT METALS ON STEAM GROWN OXIDES

被引：13

作者：

KART, S ^{[1
]}

机构：

[1] INST ANGEWANDTE FESTKORPER PHYS, ECKER STR 4, 78 FREIBURG, FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 09期

关键词：

D O I：

10.1016/0038-1101(75)90148-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：723 / 732

页数：10

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