Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition

被引：314

作者：

Zhang, Yi ^{[1
,2
]}

Gomez, Lewis ^{[1
,2
]}

Ishikawa, Fumiaki N. ^{[1
]}

Madaria, Anuj ^{[1
]}

Ryu, Koungmin ^{[1
]}

Wang, Chuan ^{[1
]}

Badmaev, Alexander ^{[1
]}

Zhou, Chongwu ^{[1
,2
]}

机构：

[1] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Chem, Los Angeles, CA 90089 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2010年 / 1卷 / 20期

关键词：

FEW-LAYER GRAPHENE; LARGE-AREA; GRAPHITE FILMS; CARBON;

D O I：

10.1021/jz1011466

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report a comparative study and Raman characterization of the formation of graphene on single crystal Ni (111) and polycrystalline Ni substrates using chemical vapor deposition (CVD). Preferential formation of monolayer/bilayer graphene on the single crystal surface is attributed to its atomically smooth surface and the absence of grain boundaries. In contrast, CVD graphene formed on polycrystalline Ni leads to a higher percentage of multilayer graphene (<= 3 layers), which is attributed to the presence of grain boundaries in Ni that can serve as nucleation sites for multilayer growth. Micro-Raman surface mapping reveals that the area percentages of monolayer/bilayer graphene are 91.4% for the Ni (111) substrate and 72.8% for the polycrystalline Ni-substrate under comparable CVD conditions. The use of single crystal substrates for graphene growth may open ways for uniform high-quality graphene over large areas.

引用

页码：3101 / 3107

页数：7

共 35 条

[1]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[2]

Bai JW, 2010, NAT NANOTECHNOL, V5, P190, DOI [10.1038/NNANO.2010.8, 10.1038/nnano.2010.8]

[3] Observation of the fractional quantum Hall effect in graphene [J].

Bolotin, Kirill I. ;

Ghahari, Fereshte ;

Shulman, Michael D. ;

Stormer, Horst L. ;

Kim, Philip .

NATURE, 2009, 462 (7270) :196-199

[4] Geometrical approach for the study of G′ band in the Raman spectrum of monolayer graphene, bilayer graphene, and bulk graphite [J].

Cancado, L. G. ;

Reina, A. ;

Kong, J. ;

Dresselhaus, M. S. .

PHYSICAL REVIEW B, 2008, 77 (24)

[5]

Chen CY, 2009, NAT NANOTECHNOL, V4, P861, DOI [10.1038/NNANO.2009.267, 10.1038/nnano.2009.267]

[6] Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics [J].

De Arco, Lewis Gomez ;

Zhang, Yi ;

Schlenker, Cody W. ;

Ryu, Koungmin ;

Thompson, Mark E. ;

Zhou, Chongwu .

ACS NANO, 2010, 4 (05) :2865-2873

[7] Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition [J].

De Arco, Lewis Gomez ;

Zhang, Yi ;

Kumar, Akshay ;

Zhou, Chongwu .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2009, 8 (02) :135-138

[8]

EIZENBERG M, 1979, SURF SCI, V82, P228, DOI 10.1016/0039-6028(79)90330-3

[9] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[10] Heteroepitaxial graphite on 6H-SiC(0001):: Interface formation through conduction-band electronic structure [J].

Forbeaux, I ;

Themlin, JM ;

Debever, JM .

PHYSICAL REVIEW B, 1998, 58 (24) :16396-16406

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