Excited muonium state in CdS

被引：18

作者：

Eshchenko, DG

Storchak, VG

Cottrell, SP

Cox, SFJ

机构：

[1] Russian Acad Sci, Inst Nucl Res, Moscow 117312, Russia

[2] Russian Res Ctr, Kurchatov Inst, Moscow 123182, Russia

[3] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.68.073201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The process of electron capture by a positive muon in semi-insulating CdS has been studied using muSR techniques in electric fields. Weak electric fields of about 8 kV/cm are sufficient to suppress the muonium formation, suggesting electron capture into excited hydrogenic states. The data indicate the first excited (n=2) state to be the bottleneck to subsequent relaxation to the ground (n=1) state, serving as a guide to electron capture by an interstitial proton into shallow-donor state of the hydrogen impurity in a wide-gap semiconductor.

引用

页数：4

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