Influence of impurities on short range electron transport in GaAs

被引：24

作者：

Eshchenko, DG

Storchak, VG

Brewer, JH

Lichti, RL

机构：

[1] Russian Acad Sci, Inst Nucl Res, Moscow 117312, Russia

[2] Kurchatov Inst, Russian Res Ctr, Moscow 123182, Russia

[3] Univ British Columbia, Canadian Inst Adv Res, Vancouver, BC V6T 1Z1, Canada

[4] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada

[5] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.89.226601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of Cr impurities on muonium atom formation in GaAs has been studied using muon spin relaxation techniques with alternating electric fields. The results suggest that electron transport to and capture by the muon is suppressed by capture/scattering on intervening Cr centers. The length scale involved is estimated to be about 3x10(-6) cm. This offers an opportunity to study electron transport to positive centers in semiconductors on a microscopic scale.

引用

页码：226601 / 226601

页数：4

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