Lattice site investigation of F in preamorphized Si

被引：9

作者：

Bernardi, F. ^{[1
]}

dos Santos, J. H. R. ^{[1
]}

Behar, M. ^{[1
]}

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.76.033201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lattice location of F atoms in Si was experimentally studied. Si single crystals were amorphized, implanted with F, and afterwards the amorphous layer was recrystallized. Some of the samples prepared in this way were also annealed at 750 degrees C for 60 min. The F-19(p,alpha gamma)O-16 resonant nuclear reaction at 340.5 keV was employed to measure the probability of a close encounter between protons and F nuclei as a function of the incident angle with respect to six major crystalline directions. The predictions of several ab initio calculations proved to be incompatible with the present experimental findings.

引用

页数：3

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