Electronic states of the antiferromagnet UGa3

被引：34

作者：

Aoki, D ^{[1
]}

Suzuki, N

Miyake, K

Inada, Y

Settai, R

Sugiyama, K

Yamamoto, E

Haga, Y

Onuki, Y

Inoue, T

Kindo, K

Sugawara, H

Sato, H

Yamagami, H

机构：

[1] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan

[2] Japan Atom Energy Res Inst, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

[3] Japan Sci Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan

[4] Osaka Univ, KYOKUGEN, Toyonaka, Osaka 5600043, Japan

[5] Tokyo Metropolitan Univ, Grad Sch Sci, Hachioji, Tokyo 1920397, Japan

[6] Kyoto Sangyo Univ, Fac Sci, Dept Phys, Kyoto 6038555, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2001年 / 70卷 / 02期

关键词：

Fermi surface; dHvA effect; magnetoresistance; Hall coefficient; thermoelectric power; UGa3;

D O I：

10.1143/JPSJ.70.538

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have grown a single crystal with the residual resistivity ratio of 81, and studied its electronic properties of the cubic antiferromagnetic compound UGa3. From the transverse magnetoresistance experiments, UGa3 has been found to be a compensated metal with equal carrier numbers of electrons and holes. In the de Haas-van Alphen experiments we have detected nine closed Fermi surfaces. Detected cyclotron effective mass is relatively large, ranging from 2.3 to 9.4 m(0). The topology of the Fermi surface is compared to the result of energy band calculations.

引用

页码：538 / 546

页数：9

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