Coupled-mode theory of the Raman effect in silicon-on-insulator waveguides

被引:43
作者
Dimitropoulos, D [1 ]
Houshmand, B [1 ]
Claps, R [1 ]
Jalali, B [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
关键词
D O I
10.1364/OL.28.001954
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Coupled-mode theory is used to calculate Raman gain and spontaneous efficiency in silicon waveguides with cross-sectional areas ranging from 0.16 to 16 mum(2). We find a monotonic increase in the Raman gain as the waveguide cross section decreases for the range of dimensions considered. It is also found that mode coupling between the Stokes modes is insignificant, and thus polarization multiplexing is possible. The results also demonstrate that for submicrometer waveguide dimensions the Einstein relation between spontaneous efficiency and stimulated gain no longer holds. (C) 2003 Optical Society of America.
引用
收藏
页码:1954 / 1956
页数:3
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