EPR study of erbium-impurity complexes in silicon

被引：12

作者：

Carey, JD

Barklie, RC ^{[1
]}

Donegan, JF

Priolo, F

Franzò, G

Coffa, S

机构：

[1] Trinity Coll, Dept Phys, Dublin 2, Ireland

[2] INFM, Catania, Italy

[3] Catania Univ, Dipartimento Fis, Catania, Italy

[4] CNR, IMETEM, I-95121 Catania, Italy

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

关键词：

magnetic resonance; erbium; oxygen; fluorine; silicon;

D O I：

10.1016/S0022-2313(98)00115-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Electron paramagnetic resonance (EPR) measurements have been used to characterise Er complexes formed in FZ silicon by the implantation of erbium together with either oxygen or fluorine. The samples have a 2 mu m thick layer containing 10(19) Er/cm(3) alone or in addition 3 x 10(19) O/cm(3), 10(20) O/cm(3) or 10(20) F/cm(3). Various post-implantation anneals were carried out. Several different erbium centres, which have either C-1h monoclinic or trigonal symmetry, are observed and the way in which the type of centre depends on the implantation and annealing conditions is reported. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：297 / 301

页数：5

共 12 条

[1]

Abragam A., 1970, ELECT PARAMAGNETIC R

[2] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].