Dysprosium silicide nanowires on Si(110)

被引：51

作者：

He, Z ^{[1
]}

Stevens, M

Smith, DJ

Bennett, PA

机构：

[1] Arizona State Univ, Sci & Engn Mat Program, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 25期

关键词：

D O I：

10.1063/1.1636244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dysprosium deposited on Si(110) at 720 degreesC is observed to form self-assembled silicide nanowire (NW) structures with a single orientation and average dimensions of 15 nm wide and microns long. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section with an interface that is coherent on one side, described by DySi2(0001)//Si(11 (1) under bar) and DySi2[01 (1) under bar0]//Si[(1) under bar 10], and incoherent on the other. This type of growth represents a physical mechanism for self-assembled NW formation that does not require anisotropic lattice mismatch. (C) 2003 American Institute of Physics.

引用

页码：5292 / 5294

页数：3

共 12 条

[1] Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy
Bennett, PA
Ashcroft, B
He, Z
Tromp, RM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 2500 - 2504
[2] Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)
Chen, Y
Ohlberg, DAA
Medeiros-Ribeiro, G
Chang, YA
Williams, RS
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (26) : 4004 - 4006
[3] Nanowires of four epitaxial hexagonal silicides grown on Si(001)
Chen, Y
Ohlberg, DAA
Williams, RS
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) : 3213 - 3218
[4] Epitaxial titanium silicide islands and nanowires
He, ZA
Stevens, M
Smith, DJ
Bennett, PA
[J]. SURFACE SCIENCE, 2003, 524 (1-3) : 148 - 156
[5] HE ZB, UNPUB
[6] Molecular electronics
Heath, JR
Ratner, MA
[J]. PHYSICS TODAY, 2003, 56 (05) : 43 - 49
[7] A defect-tolerant computer architecture: Opportunities for nanotechnology
Heath, JR
Kuekes, PJ
Snider, GS
Williams, RS
[J]. SCIENCE, 1998, 280 (5370) : 1716 - 1721
[8] High-temperature epitaxy of PtSi/Si(001)
Kavanagh, KL
Reuter, MC
Tromp, RM
[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) : 393 - 401
[9] Gd disilicide nanowires attached to Si(111) steps
McChesney, JL
Kirakosian, A
Bennewitz, R
Crain, JN
Lin, JL
Himpsel, FJ
[J]. NANOTECHNOLOGY, 2002, 13 (04) : 545 - 547
[10] Self-assembled rare-earth silicide nanowires on Si(001)
Nogami, J
Liu, BZ
Katkov, MV
Ohbuchi, C
Birge, NO
[J]. PHYSICAL REVIEW B, 2001, 63 (23)

← 1 2 →