Self-assembled rare-earth silicide nanowires on Si(001)

被引：204

作者：

Nogami, J ^{[1
]}

Liu, BZ

Katkov, MV

Ohbuchi, C

Birge, NO

机构：

[1] Michigan State Univ, Dept Mat Sci & Mech, E Lansing, MI 48824 USA

[2] Michigan State Univ, Ctr Fundamental Mat Res, E Lansing, MI 48824 USA

[3] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.63.233305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents scanning tunneling microscope images of several rare-earth metal silicides grown on silicon (001). For certain of the metals studied (Dy, Ho), an anisotropy in lattice match with the substrate results in the formation of nanowires. These nanowires have desirable properties such as nanometer lateral dimension, crystalline structure with a low density of defects, and micrometer scale length. Tunneling spectroscopy on the nanowires indicates that they are metallic.

引用

页数：4

共 12 条

[1] Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)
Chen, Y
Ohlberg, DAA
Medeiros-Ribeiro, G
Chang, YA
Williams, RS
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (26) : 4004 - 4006
[2] EPITAXIAL ERBIUM SILICIDE FILMS ON SI(111) SURFACE - FABRICATION, STRUCTURE, AND ELECTRICAL-PROPERTIES
DUBOZ, JY
BADOZ, PA
PERIO, A
OBERLIN, JC
DAVITAYA, FA
CAMPIDELLI, Y
CHROBOCZEK, JA
[J]. APPLIED SURFACE SCIENCE, 1989, 38 (1-4) : 171 - 177
[3] PHASE-DIAGRAM OF THE HOLMIUM SILICON BINARY-SYSTEM AND PHYSICAL-PROPERTIES OF HOLMIUM SILICIDES UP TO 1050 DEGREES-C
EREMENKO, VN
LISTOVNICHII, VE
LUZAN, SP
BUYANOV, YI
MARTSENYUK, PS
[J]. JOURNAL OF ALLOYS AND COMPOUNDS, 1995, 219 (1-2) : 181 - 184
[4] VALENCE FLUCTUATIONS OF YTTERBIUM IN SILICON-RICH COMPOUNDS
IANDELLI, A
PALENZONA, A
OLCESE, GL
[J]. JOURNAL OF THE LESS-COMMON METALS, 1979, 64 (02): : 213 - 220
[5] EPITAXIAL-GROWTH OF RARE-EARTH SILICIDES ON (111) SI
KNAPP, JA
PICRAUX, ST
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 466 - 468
[6] LIU BZ, IN PRESS SURF SCI
[7] Vacancy ordering structures in epitaxial RESi2-x thin films on (111)Si and (001)Si
Luo, CH
Shen, GH
Chen, LJ
[J]. APPLIED SURFACE SCIENCE, 1997, 113 : 457 - 461
[8] Role of silicon vacancies in yttrium-disilicide compounds from ab initio calculations
Magaud, L
Pasturel, A
Kresse, G
Hafner, J
[J]. PHYSICAL REVIEW B, 1997, 55 (20): : 13479 - 13484
[9] Electrical resistivity in amorphous Si-Ln (Ln: Nd, Sm, Gd) alloy powders prepared by mechanical alloying
Ohba, N
Arakawa, T
[J]. APPLIED SURFACE SCIENCE, 1997, 121 : 125 - 128
[10] Formation of dysprosium silicide wires on Si(001)
Preinesberger, C
Vandre, S
Kalka, T
Dahne-Prietsch, M
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (12) : L43 - L45

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