Role of silicon vacancies in yttrium-disilicide compounds from ab initio calculations

被引:30
作者
Magaud, L
Pasturel, A
Kresse, G
Hafner, J
机构
[1] CNRS,LAB PHYS NUMER,F-38042 GRENOBLE,FRANCE
[2] VIENNA TECH UNIV,INST THEORET PHYS,A-1040 VIENNA,AUSTRIA
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 20期
关键词
D O I
10.1103/PhysRevB.55.13479
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structural properties of the compound YSi2 are investigated by means of ab initio simulations based on density-functional theory. More particularly we emphasize the role played by Si vacancies, show that the Th3Pd5 structure can be deduced from the AlB2 structure by a relaxation process around the Si vacancies within the (0001) plane. A specific ordered arrangement of the Si vacancies along the [0001] direction is found to be energetically the most favorable. Geometries obtained from our theoretical calculations are in good agreement with experimental results.
引用
收藏
页码:13479 / 13484
页数:6
相关论文
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