ELECTRONIC-STRUCTURE OF ERBIUM DISILICIDE

被引：26

作者：

ALLAN, G

LEFEBVRE, I

CHRISTENSEN, NE

机构：

[1] AARHUS UNIV,INST PHYS & ASTRON,DK-8000 AARHUS,DENMARK

[2] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.48.8572

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The calculation of the electronic structure of ideal ErSi2 has been performed using the linear-muffin-tin-orbital method. Tight-binding parameters were then obtained by fitting to the calculated dispersion curves and applied to two nonstoichiometric ErSi1.7 structures corresponding to different vacancy orderings along the c crystal axis. Comparison is made with experimental photoemission data and the relative stability of the different phases is discussed as well as the low value of the Schottky barrier at the ErSi2-Si interface.

引用

页码：8572 / 8577

页数：6

共 23 条

[1] ELECTRONIC-STRUCTURE OF SAMARIUM ATOMS ADSORBED ON THE GAAS(110) SURFACE [J].