共 26 条
[2]
THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES
[J].
PHYSICAL REVIEW B,
1984, 29 (02)
:785-792
[3]
CHADI DJ, 1979, PHYS REV B, V19, P2079
[4]
CHRISTENSEN N, COMMUNICATION
[6]
NEW THEORETICAL APPROACH OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1989, 39 (03)
:1669-1681
[8]
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[10]
ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE
[J].
PHYSICAL REVIEW B,
1985, 32 (02)
:962-968