SURFACE CRYSTALLOGRAPHY OF YSI2-X FILMS EPITAXIALLY GROWN ON SI(111) - AN X-RAY PHOTOELECTRON DIFFRACTION STUDY

被引：97

作者：

BAPTIST, R

FERRER, S

GRENET, G

POON, HC

机构：

[1] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE

[2] UNIV LYON 1,INST PHYS NUCL,F-69622 VILLEURBANNE,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.64.311

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The surface crystallography of epitaxially grown YSi2-x (x=0.3 and x=0) films on Si(111) has been investigated using x-ray photoelectron diffraction. For the YSi1.7 films, vacancies form an ordered 3 × 3 R30°superlattice within each Si plane. These vacancies are filled for YSi2. The analysis reveals that their surfaces are Si terminated with a displacement upward (0.8 AI) of one Si atom out of two so that they exhibit the same geometry as a 1×1 Si(111) surface. © 1990 The American Physical Society.

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页码：311 / 314

页数：4

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