Vacancy ordering structures in epitaxial RESi2-x thin films on (111)Si and (001)Si

被引：22

作者：

Luo, CH ^{[1
]}

Shen, GH ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] NATL TSING HUA UNIV, DEPT MAT SCI & ENGN, HSINCHU 30043, TAIWAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

rare-earth silicides; vacancy ordering; orientation dependence;

D O I：

10.1016/S0169-4332(96)00806-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The vacancy ordering structures of epitaxial TbSi2-x, ErSi2-x, YSi2-x, and DySi2-x thin films on (001)Si and (111)Si have been investigated by electron diffraction analysis. From a combination of studying planview and cross-sectional transmission electron microscope samples, the 3-dimensional structures of vacancy ordering were determined. The vacancy ordering superstructure of unit cell (a root 3 a root 3 2c) was found in epitaxial TbSi2-x, ErSi2-x and YSi2-x thin films on (001)Si samples. However, the vacancy ordering superstructure of unit cell (a root 3 a root 3 c) was found in epitaxial TbSi2-x and DySi2-x thin films on (111)Si samples. The variation in strains induced in these films is suggested to result in the change of the vacancy ordering structure.

引用

页码：457 / 461

页数：5

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