Ferroelectricity in yttrium-doped hafnium oxide

被引：494

作者：

Mueller, J. ^{[1
]}

Schroeder, U. ^{[2
,7
]}

Boescke, T. S. ^{[7
]}

Mueller, I. ^{[3
]}

Boettger, U. ^{[3
]}

Wilde, L. ^{[1
]}

Sundqvist, J. ^{[1
,7
]}

Lemberger, M. ^{[4
]}

Kuecher, P. ^{[1
]}

Mikolajick, T. ^{[2
,5
]}

Frey, L. ^{[4
,6
]}

机构：

[1] Fraunhofer Ctr Nanoelect Technol CNT, D-01099 Dresden, Germany

[2] Namlab GGmbH, D-01187 Dresden, Germany

[3] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52074 Aachen, Germany

[4] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

[5] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

[6] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany

[7] Qimonda Dresden, Dresden, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 11期

关键词：

ATOMIC LAYER DEPOSITION; THIN-FILMS; HFO2; FILMS; ZIRCONIA; CAPACITORS; STABILITY; SYSTEM; ZRO2;

D O I：

10.1063/1.3667205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO1.5 in HfO2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase. The potential ferroelectricity of this orthorhombic phase was confirmed by polarization hysteresis measurements on titanium nitride based metal-insulator-metal capacitors. For 5.2 mol% YO1.5 admixture the remanent polarization peaked at 24 mu C/cm(2) with a coercive field of about 1.2 MV/cm. Considering the availability of conformal deposition processes and CMOS-compatibility, ferroelectric Y:HfO2 implies high scaling potential for future, ferroelectric memories. (C) 2011 American Institute of Physics. [doi:10.1063/1.3667205]

引用

页数：5

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