Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements

被引：55

作者：

Bernacki, S ^{[1
]}

Hunt, K

Tyson, S

Hudgens, S

Pashmakov, B

Czubatyj, W

机构：

[1] Raytheon Syst Co, Sudbury, MA 01776 USA

[2] USAF, Res Lab, Kirtland AFB, NM 87117 USA

[3] Ovonyx, Troy, MI 48084 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期

关键词：

D O I：

10.1109/23.903803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chalcogenide thin film resistor elements are being integrated with CMOS structures for nonvolatile memory applications, This paper reports on the first total dose and imprint data published on this new technology demonstrating no observable effects on chalcogenide films after exposure to 1 Mrad(Si) and 125 degreesC temperature.

引用

页码：2528 / 2533

页数：6

共 9 条

[1]

Fritzsche H, 1972, ANN REV MAT SCI, V2, P697, DOI DOI 10.1146/ANNUREV.MS.02.080172.003405

[2] AMORPHOUS SEMICONDUCTORS FOR SWITCHING, MEMORY, AND IMAGING APPLICATIONS [J].