20.1%-Efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation

被引：99

作者：

Schaper, M ^{[1
]}

Schmidt, J ^{[1
]}

Plagwitz, H ^{[1
]}

Brendel, R ^{[1
]}

机构：

[1] Inst Solarenergieforsch GmbH Hameln Emmerthal, ISFH, D-31860 Emmerthal, Germany

来源：

PROGRESS IN PHOTOVOLTAICS | 2005年 / 13卷 / 05期

关键词：

rear surface passivation; amorphous silicon; local metallization; high efficiency; silicon solar cell;

D O I：

10.1002/pip.641

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have developed a crystalline silicon solar cell with amorphous silicon (a-Si:H) rear-surface passivation based on a simple process. The a-Si:H layer is deposited at 225 degrees C by plasma-enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a-Si:H-passivated rear. The base contacts are formed by COSIMA (contact formation to a-Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325 degrees C. The a-Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5 +/- 0.2 m Omega cm(2) on low-resistivity (0.5 Omega cm) p-type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20.1% under one-sun standard testing conditions for a 4 cm(2) large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation. Copyright (c) 2005 John Wiley & Sons, Ltd.

引用

页码：381 / 386

页数：6

共 21 条

[1]

ABERLE A, 1990, IEEE PHOT SPEC CONF, P233, DOI 10.1109/PVSC.1990.111623

[2]

BASORE PA, 1993, IEEE PHOT SPEC CONF, P147, DOI 10.1109/PVSC.1993.347063

[3]

Brendel R., 1997, Proc. of the 14th EU PVSEC, P1354

[4]

Dauwe S, 2003, WORL CON PHOTOVOLT E, P1395

[5] Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films [J].

Dauwe, S ;

Schmidt, J ;

Hezel, R .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :1246-1249

[6] Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells [J].

Dauwe, S ;

Mittelstädt, L ;

Metz, A ;

Hezel, R .

PROGRESS IN PHOTOVOLTAICS, 2002, 10 (04) :271-278

[7] CHARACTERIZATION OF 23-PERCENT EFFICIENT SILICON SOLAR-CELLS [J].

GREEN, MA ;

BLAKERS, AW ;

ZHAO, JH ;

MILNE, AM ;

WANG, AH ;

DAI, XM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (02) :331-336

[8]

HAQUE MS, 1994, J APPL PHYS, V75, P3928, DOI 10.1063/1.356039

[9] ANALYSIS OF INTERNAL QUANTUM EFFICIENCY AND A NEW GRAPHICAL EVALUATION SCHEME [J].

HIRSCH, M ;

RAU, U ;

WERNER, JH .

SOLID-STATE ELECTRONICS, 1995, 38 (05) :1009-1015

[10]

HUBNER A, 1997, P 14 EUR PHOT SOL EN, P92

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