Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films

被引：126

作者：

Dauwe, S ^{[1
]}

Schmidt, J ^{[1
]}

Hezel, R ^{[1
]}

机构：

[1] Inst Solarenergieforsch Hameln Emmerthal, ISFH, D-31860 Emmerthal, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190834

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Outstanding surface passivation of single-crystalline p- as well as n-type silicon is obtained using hydrogenated amorphous silicon (a-Si:H) films deposited at very low temperature in a plasma-enhanced chemical vapor deposition (PECVD) system. It is demonstrated that a-Si:H films with excellent surface passivation properties can be deposited in the temperature range between 200 and 250 degreesC. Despite the low deposition temperature, the surface passivation of low-resistivity (similar to 1 Omegacm) p-type silicon provided by the films exceeds that provided by high-temperature; (similar to 1000 degreesC) thermal oxides and PECVD silicon nitride films deposited at temperatures around 400 degreesC. A record-low surface recombination velocity (SRV) of 3 cm/s is achieved on 1.6-Omegacm p-Si. In addition, on 3.4-Omegacm n-Si wafers, very low SRVs of 7 cm/s are obtained. Investigations regarding the thermal stability of the passivation quality of the a-Si:H films show that the passivation is stable for temperatures exceeding the deposition temperature.

引用

页码：1246 / 1249

页数：4

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