Printed organic semiconducting devices

被引：48

作者：

Chason, M ^{[1
]}

Brazis, PW ^{[1
]}

Zhang, H ^{[1
]}

Kalyanasundaram, K ^{[1
]}

Gamota, DR ^{[1
]}

机构：

[1] Motorola Inc, Phys Realizat Res Ctr, Schaumburg, IL 60196 USA

来源：

PROCEEDINGS OF THE IEEE | 2005年 / 93卷 / 07期

关键词：

graphic arts printing; printed electronics; printed electronics standards; printed organic semiconductor; organic transistor; RFID;

D O I：

10.1109/JPROC.2005.850306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent improvements in carrier mobility, environmental stability, and advancements in p- and n-type organic semiconductor materials have resulted in reports of device operation suitable for low-functionality, low-cost products. Deposition of solution-processable materials that enable the use of low-cost, high-speed deposition techniques such as screen printing, spin coating, and conventional graphic arts printing technologies have also recently been demonstrated. The material requirements necessary to realize these products, an organic transistor device structure that can be fabricated with these materials via printing processes, and the resulting device performance are presented and discussed. The use of standards and their impact on driving technology to commercialization are also addressed.

引用

页码：1348 / 1356

页数：9

共 30 条

[1] AFZALI A, 2002, INT MICR PACK SOC AD
[2] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility
Bao, Z
Dodabalapur, A
Lovinger, AJ
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4108 - 4110
[3] Suppression of charge carrier tunneling through organic self-assembled monolayers
Boulas, C
Davidovits, JV
Rondelez, F
Vuillaume, D
[J]. PHYSICAL REVIEW LETTERS, 1996, 76 (25) : 4797 - 4800
[4] BURNS S, 2003, SOC INF DISPL INT S
[5] Chen Y, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P389, DOI 10.1109/IEDM.2002.1175860
[6] Nano-field effect transistor with an organic self-assembled monolayer as gate insulator
Collett, J
Vuillaume, D
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2681 - 2683
[7] Large-scale complementary integrated circuits based on organic transistors
Crone, B
Dodabalapur, A
Lin, YY
Filas, RW
Bao, Z
LaDuca, A
Sarpeshkar, R
Katz, HE
Li, W
[J]. NATURE, 2000, 403 (6769) : 521 - 523
[8] Facchetti A, 2004, PRINTED ORGANIC AND MOLECULAR ELECTRONICS, P83, DOI 10.1007/978-1-4419-9074-7_2
[9] n-type building blocks for organic electronics: A homologous family of fluorocarbon-substituted thiophene oligomers with high carrier mobility
Facchetti, A
Mushrush, M
Katz, HE
Marks, TJ
[J]. ADVANCED MATERIALS, 2003, 15 (01) : 33 - +
[10] Chemical self-assembly for electronic applications
Fendler, JH
[J]. CHEMISTRY OF MATERIALS, 2001, 13 (10) : 3196 - 3210

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