Ion-beam sculpting at nanometre length scales

被引:1455
作者
Li, J
Stein, D
McMullan, C
Branton, D
Aziz, MJ
Golovchenko, JA [1 ]
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[3] Harvard Univ, Dept Mol & Cellular Biol, Cambridge, MA 02138 USA
关键词
D O I
10.1038/35084037
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Manipulating matter at the nanometre scale is important for many electronic, chemical and biological advances(1-3), but present solid-state fabrication methods do not reproducibly achieve dimensional control at the nanometre scale. Here we report a means of fashioning matter at these dimensions that uses low-energy ion beams and reveals surprising atomic transport phenomena that occur in a variety of materials and geometries. The method is implemented in a feedback-controlled sputtering system that provides fine control over ion beam exposure and sample temperature. We call the method "ion-beam sculpting'', and apply it to the problem of fabricating a molecular-scale hole, or nanopore, in a thin insulating solid-state membrane. Such pores can serve to localize molecular-scale electrical junctions and switches(4-6) and function as masks(7) to create other small-scale structures. Nanopores also function as membrane channels in all living systems, where they serve as extremely sensitive electro-mechanical devices that regulate electric potential, ionic flow, and molecular transport across cellular membranes(8). We show that ion-beam sculpting can be used to fashion an analogous solid-state device: a robust electronic detector consisting of a single nanopore in a Si(3)N(4) membrane, capable of registering single DNA molecules in aqueous solution.
引用
收藏
页码:166 / 169
页数:4
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