Nanofabrication using a stencil mask

被引：168

作者：

Deshmukh, MM ^{[1
]}

Ralph, DC ^{[1
]}

Thomas, M ^{[1
]}

Silcox, J ^{[1
]}

机构：

[1] Cornell Univ, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 11期

关键词：

D O I：

10.1063/1.124777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe tests of a technique to fabricate nanostructures by the evaporation of metal through a stencil mask etched in a suspended silicon nitride membrane. Collimated evaporation through the mask gives metal dots less than 15 nm in diameter and lines 15-20 nm wide. We have investigated the extent of hole clogging and the factors which determine the ultimate resolution of the technique. (C) 1999 American Institute of Physics. [S0003- 6951(99)00437-4].

引用

页码：1631 / 1633

页数：3

共 7 条

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[2] A new fabrication method for ultra small tunnel junctions [J].