Large transmittance changes induced in Ga-doped ZnO thin films prepared by pulsed laser deposition

被引：12

作者：

Suzuki, A ^{[1
]}

Matsushita, T ^{[1
]}

Yamanishi, H ^{[1
]}

Tanaka, D ^{[1
]}

Aoki, T ^{[1
]}

Okuda, M ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE, COLL ENGN, DEPT PHYS ELECT, SAKAI, OSAKA 593, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 12A期

关键词：

large transmittance changes; ZnO:Ga film; pulsed laser deposition; high-density optical recording films;

D O I：

10.1143/JJAP.35.L1603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of ZnO:Ga (GZO) have been deposited on glass substrates at room temperature by a pulsed laser deposition technique using a Nd:YAG laser (lambda = 1064 nm). The 100-nm-thick GZO films grown in vacuum were dark brown and showed optical transmittance of less than 20% in the 300-3200 nm wavelength region. On the other hand, it was found that GZO films grown in vacuum and annealed at 400-420 degrees C for 3-5 min showed an average transmittance of above 80% in the 400-3200 nm wavelength region. GZO films with large transmittance changes in the 400-600 nn wavelength region can be applied to high-density optical recording films.

引用

页码：L1603 / L1604

页数：2

共 4 条

[1]

DUTKIEWICZ J, 1990, BINARY ALLOYING PHAS, V2, P1878

[2]

JINNO S, 1995, 7 S PHAS CHANG REC S, P35

[3] Surface flatness of transparent conducting ZnO:Ga thin films grown by pulsed laser deposition [J].

Suzuki, A ;

Matsushita, T ;

Sakamoto, Y ;

Wada, N ;

Fukuda, T ;

Fujiwara, H ;

Okuda, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (10) :5457-5461

[4] Transparent conducting Al-doped ZnO thin films prepared by pulsed laser deposition [J].

Suzuki, A ;

Matsushita, T ;

Wada, N ;

Sakamoto, Y ;

Okuda, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (1A) :L56-L59

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