Transparent conducting Al-doped ZnO thin films prepared by pulsed laser deposition

被引：161

作者：

Suzuki, A ^{[1
]}

Matsushita, T ^{[1
]}

Wada, N ^{[1
]}

Sakamoto, Y ^{[1
]}

Okuda, M ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,COLL ENGN,DEPT PHYS & ELECTR,SAKAI,OSAKA 591,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 1A期

关键词：

transparent conducting oxide films; ZnO:Al film; pulsed laser deposition; liquid crystal transparent electrode; solar cell transparent electrode;

D O I：

10.1143/JJAP.35.L56

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of ZnO:Al have been deposited on glass substrates by a pulsed laser deposition technique employing an ArF laser (lambda = 193 nm). For all experiments, a repetition rate of 10 Hz, an energy density of 1 J/cm(2), and an irradiation time of 20-30 min (12000-18000 shots) mere assumed. Optical transmittance of around 90% was observed in the visible region of the spectrum for the 150-200 nm thick film. Resistivities of 1.43 x 10(-4) Omega . cm and 5.62 x 10(-4) Omega . cm were obtained at substrate temperatures of 300 degrees C and room temperature, respectively.

引用

页码：L56 / L59

页数：4

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