SUBSTRATE-TEMPERATURE DEPENDENCE OF TRANSPARENT CONDUCTING AL-DOPED ZNO THIN-FILMS PREPARED BY MAGNETRON SPUTTERING

被引：107

作者：

MINAMI, T

SATO, H

IMAMOTO, H

TAKATA, S

机构：

[1] Electron Device System Laboratory, Kanazawa Institute of Technology, Nonoichi, Ishikawa, 921

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 3A期

关键词：

TRANSPARENT ELECTRODE; TRANSPARENT CONDUCTING FILM; AL-DOPED ZNO; DC MAGNETRON SPUTTERING; THIN FILM; SPUTTERING; ZINC OXIDE;

D O I：

10.1143/JJAP.31.L257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A technique is demonstrated that improves the substrate spatial distributions of resistivity and film thickness of transparent conducting oxide thin films prepared using a conventional dc planar magnetron sputtering method. The spatial distributions of Al-doped ZnO (AZO) films are markedly improved by deposition onto substrates at temperatures above 300-degrees-C. Large-area AZO films with a resistivity of 3-6 x 10(-4) OMEGA . cm can be produced at a substrate temperature of 350-degrees-C.

引用

收藏

页码：L257 / L260

页数：4

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