Enhanced ultraviolet emission and optical properties in polyvinyl pyrrolidone surface modified ZnO quantum dots

被引：140

作者：

Yang, CL

Wang, JN

Ge, WK

Guo, L

Yang, SH

Shen, DZ

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Chem, Hong Kong, Hong Kong, Peoples R China

[3] Chinese Acad Sci, Chang Chun Inst Opt Fine Mech & Phys, Lab Excited Proc, Changchun, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 09期

关键词：

D O I：

10.1063/1.1406973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of ZnO quantum dots (QDs) capped with polyvinyl pyrrolidone (PVP) molecules have been investigated. It is demonstrated that surface modification by PVP can dramatically change the emission spectra of the ZnO QDs. At the optimized condition with a PVP/Zn2+ ratio of 3:5, the photoluminescence (PL) spectrum of ZnO QDs shows a strong ultraviolet (UV) emission while the low energy green emission is fully quenched. This is a result of the surface passivation of the ZnO QDs by the PVP molecules. The origin of the green emission is attributed to the surface states associated with oxygen vacancies. Temperature and excitation power dependent PL studies suggest that the UV emission is associated with localized states. (C) 2001 American Institute of Physics.

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页码：4489 / 4493

页数：5

相关论文

共 29 条

[1] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040

[2] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[3] THERMAL DISSOCIATION OF EXCITONS BOUNDS TO NEUTRAL ACCEPTORS IN HIGH-PURITY GAAS [J].

BIMBERG, D ;

SONDERGELD, M ;

GROBE, E .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3451-+

[4] Luminescence behaviour of chemically grown ZnO quantum dots [J].

Borgohain, K ;

Mahamuni, S .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (10) :1154-1157

[5] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[6] Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J].

Cho, SL ;

Ma, J ;

Kim, YK ;

Sun, Y ;

Wong, GKL ;

Ketterson, JB .

APPLIED PHYSICS LETTERS, 1999, 75 (18) :2761-2763

[7] ROOM-TEMPERATURE PHOTOLUMINESCENCE TIMES IN A GAAS ALXGA1-XAS MOLECULAR-BEAM EPITAXY MULTIPLE QUANTUM WELL STRUCTURE [J].

FOUQUET, JE ;

SIEGMAN, AE .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :280-282

[8] Highly monodisperse polymer-capped ZnO nanoparticles: Preparation and optical properties [J].

Guo, L ;

Yang, SH ;

Yang, CL ;

Yu, P ;

Wang, JN ;

Ge, WK ;

Wong, GKL .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2901-2903

[9] Synthesis and characterization of poly(vinylpyrrolidone)-modified zinc oxide nanoparticles [J].

Guo, L ;

Yang, SH ;

Yang, CL ;

Yu, P ;

Wang, JN ;

Ge, WK ;

Wong, GKL .

CHEMISTRY OF MATERIALS, 2000, 12 (08) :2268-2274

[10] PHOTOCHEMISTRY AND RADIATION-CHEMISTRY OF COLLOIDAL SEMICONDUCTORS .23. ELECTRON STORAGE ON ZNO PARTICLES AND SIZE QUANTIZATION [J].

HAASE, M ;

WELLER, H ;

HENGLEIN, A .

JOURNAL OF PHYSICAL CHEMISTRY, 1988, 92 (02) :482-487