RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface

被引：7

作者：

Nikiforov, AI ^{[1
]}

Kanter, BZ ^{[1
]}

Pchelyakov, OP ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

THIN SOLID FILMS | 1998年 / 336卷 / 1-2期

基金：

俄罗斯基础研究基金会;

关键词：

MBE; RHEED; silicon; limiting thickness;

D O I：

10.1016/S0040-6090(98)01234-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new technique is suggested in order to find the limiting thickness of an epitaxial Si layer h(epi). It is based on monitoring the intensity variations of a bulk spot in the RHEED pattern during MBE growth. A maximum is observed in the plot of intensity versus deposited film thickness. The maximum intensity corresponds to h(epi). The activation energy of the limiting thickness epitaxy is 0.5 eV. Thus, the process of low-temperature growth and the surface recovery can be controlled in situ by monitoring of variations in intensity of diffraction peaks. To achieve the control, registration of intensity Variations of not only bulk spots but also superstructural ones should be used. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：179 / 182

页数：4

共 6 条

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[6]

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