LOW-TEMPERATURE KINETICS OF SI(100) MBE GROWTH

[1] GROWTH-MECHANISM FOR MOLECULAR-BEAM EPITAXY OF GROUP-IV SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1988, 37 (11): : 6559 - 6562

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] HERZOG HJ, 1988, CHEM PHYSICS SOLID S, V7, P557

[4] EPITAXY OF MONOLAYER SILICON FILMS STUDIED BY OPTICAL 2ND-HARMONIC GENERATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 709 - 709

[5] PROPERTIES OF SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY LOW-TEMPERATURES [J]. APPLIED PHYSICS LETTERS, 1989, 54 (09) : 819 - 821

[6] KINETICS OF ORDERED GROWTH OF SI ON SI(100) AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW B, 1989, 40 (03): : 2005 - 2008

[7] 1985, LANDOLTBORNSTEIN, V3, P43

[1] GROWTH-MECHANISM FOR MOLECULAR-BEAM EPITAXY OF GROUP-IV SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1988, 37 (11): : 6559 - 6562

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] HERZOG HJ, 1988, CHEM PHYSICS SOLID S, V7, P557

[4] EPITAXY OF MONOLAYER SILICON FILMS STUDIED BY OPTICAL 2ND-HARMONIC GENERATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 709 - 709

[5] PROPERTIES OF SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY LOW-TEMPERATURES [J]. APPLIED PHYSICS LETTERS, 1989, 54 (09) : 819 - 821

[6] KINETICS OF ORDERED GROWTH OF SI ON SI(100) AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW B, 1989, 40 (03): : 2005 - 2008

[7] 1985, LANDOLTBORNSTEIN, V3, P43