KINETICS OF ORDERED GROWTH OF SI ON SI(100) AT LOW-TEMPERATURES

[1] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] DEJONG T, 1983, J VAC SCI TECHNOL B, V1, P808

[4] DOI T, 1989, J CRYST GROWTH, V95, P468, DOI 10.1016/0022-0248(89)90444-2

[5] MOLECULAR-BEAM EPITAXY AND RECONSTRUCTED SURFACES - INITIAL-STAGES OF INTERFACE FORMATION IN GROUP IV-IV STRUCTURES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (03): : 171 - 179

[6] HALE AP, 1963, VACUUM, V13, P93

[7] HEINZ TF, 1987, MATER RES SOC S P, V75, P697

[8] HERZOG HJ, UNPUB

[9] EPITAXY OF MONOLAYER SILICON FILMS STUDIED BY OPTICAL 2ND-HARMONIC GENERATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 709 - 709

[10] STUDY OF EARLY STAGES OF EPITAXY OF SILICON ON SILICON [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 235 - &

[1] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] DEJONG T, 1983, J VAC SCI TECHNOL B, V1, P808

[4] DOI T, 1989, J CRYST GROWTH, V95, P468, DOI 10.1016/0022-0248(89)90444-2

[5] MOLECULAR-BEAM EPITAXY AND RECONSTRUCTED SURFACES - INITIAL-STAGES OF INTERFACE FORMATION IN GROUP IV-IV STRUCTURES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (03): : 171 - 179

[6] HALE AP, 1963, VACUUM, V13, P93

[7] HEINZ TF, 1987, MATER RES SOC S P, V75, P697

[8] HERZOG HJ, UNPUB

[9] EPITAXY OF MONOLAYER SILICON FILMS STUDIED BY OPTICAL 2ND-HARMONIC GENERATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 709 - 709

[10] STUDY OF EARLY STAGES OF EPITAXY OF SILICON ON SILICON [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 235 - &