PROPERTIES OF SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY LOW-TEMPERATURES

被引：41

作者：

JORKE, H

KIBBEL, H

SCHAFFLER, F

CASEL, A

HERZOG, HJ

KASPER, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.100857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：819 / 821

页数：3

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