SPATIAL LOCALIZATION OF IMPURITIES IN DELTA-DOPED GAAS

被引：99

作者：

SCHUBERT, EF ^{[1
]}

STARK, JB ^{[1
]}

ULLRICH, B ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 18期

关键词：

D O I：

10.1063/1.99114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1508 / 1510

页数：3

共 8 条

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[2]

LEE H, 1985, I PHYS C SER, V74, P321

[3] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY [J].

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[4] SELECTIVELY DELTA-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS N2DEG-GREATER-THAN-OR-EQUAL-TO-1.5X10(12) CM-2 FOR FIELD-EFFECT TRANSISTORS [J].

SCHUBERT, EF ;

CUNNINGHAM, JE ;

TSANG, WT ;

TIMP, GL .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1170-1172

[5] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR [J].

SCHUBERT, EF ;

PLOOG, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L608-L610

[6]

ULLRICH B, UNPUB

[7] COMPLEX FREE-CARRIER PROFILE SYNTHESIS BY ATOMIC-PLANE DOPING OF MBE GAAS [J].

WOOD, CEC ;

METZE, G ;

BERRY, J ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :383-387

[8]

ZRENNER A, 1987, 7TH P INT C EL PROP, P341

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