SELECTIVELY DELTA-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS N2DEG-GREATER-THAN-OR-EQUAL-TO-1.5X10(12) CM-2 FOR FIELD-EFFECT TRANSISTORS

被引：85

作者：

SCHUBERT, EF

CUNNINGHAM, JE

TSANG, WT

TIMP, GL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 15期

关键词：

D O I：

10.1063/1.98722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1170 / 1172

页数：3

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